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ISEE Makes Progress in the Field of Hot Electron Transistor Research
ISEE Makes Progress in the Field of Hot Electron Transistor Research

Proper Referencing of Prior Art
Proper Referencing of Prior Art

IEEE Electron Devices Society - Each month, the Editors of the IEEE Electron Device Letters select a small number of particularly remarkable articles as Editors' Picks, one of which is on the
IEEE Electron Devices Society - Each month, the Editors of the IEEE Electron Device Letters select a small number of particularly remarkable articles as Editors' Picks, one of which is on the

IEEE Electron Device Letters Impact Factor:... | Exaly
IEEE Electron Device Letters Impact Factor:... | Exaly

IEEE Electron Devices Society on Twitter: "#EditorsPick @IEEEorg #ElectronDeviceLetters on broadband #graphene field-effect coupled detectors: from soft #xray to near-infrared. https://t.co/8gQ0WM6euW FREE access for one month! #IEEEEDS ...
IEEE Electron Devices Society on Twitter: "#EditorsPick @IEEEorg #ElectronDeviceLetters on broadband #graphene field-effect coupled detectors: from soft #xray to near-infrared. https://t.co/8gQ0WM6euW FREE access for one month! #IEEEEDS ...

PDF) Non-Linear Output-Conductance Function for Robust Analysis of Two-Dimensional Transistors
PDF) Non-Linear Output-Conductance Function for Robust Analysis of Two-Dimensional Transistors

Announcing the IEEE Journal of Electron Devices Society
Announcing the IEEE Journal of Electron Devices Society

IEEE Electron Device Letters Information for authors
IEEE Electron Device Letters Information for authors

IEEE ELECTRON DEVICE LETTERS, VOL. 36, NO. 7
IEEE ELECTRON DEVICE LETTERS, VOL. 36, NO. 7

Electron Device Letters - IEEE Electron Devices Society
Electron Device Letters - IEEE Electron Devices Society

IEEE Electron Device Letters template - For Authors
IEEE Electron Device Letters template - For Authors

IIA-5 accumulation-mode GaAs MIS-like FET self-aligned by ion implantation | IEEE Journals & Magazine | IEEE Xplore
IIA-5 accumulation-mode GaAs MIS-like FET self-aligned by ion implantation | IEEE Journals & Magazine | IEEE Xplore

Glasgow Microelectronics ๐Ÿด๓ ง๓ ข๓ ณ๓ ฃ๓ ด๓ ฟ๐Ÿ‡ช๐Ÿ‡บ๐Ÿ‡ฌ๐Ÿ‡ง on Twitter: "@hadihei @siming_zuo @IEEEEDS @KiaNazarpour @UofGEngineering Another great Sunday morning ๐Ÿ˜Š Great to see our paper image has been featured at the cover front page of IEEE Electron
Glasgow Microelectronics ๐Ÿด๓ ง๓ ข๓ ณ๓ ฃ๓ ด๓ ฟ๐Ÿ‡ช๐Ÿ‡บ๐Ÿ‡ฌ๐Ÿ‡ง on Twitter: "@hadihei @siming_zuo @IEEEEDS @KiaNazarpour @UofGEngineering Another great Sunday morning ๐Ÿ˜Š Great to see our paper image has been featured at the cover front page of IEEE Electron

Transactions on Electron Devices - IEEE Electron Devices Society
Transactions on Electron Devices - IEEE Electron Devices Society

VIB-2 an amorphous SiC:H emitter/crystalline Si heterobipolar transistor | IEEE Journals & Magazine | IEEE Xplore
VIB-2 an amorphous SiC:H emitter/crystalline Si heterobipolar transistor | IEEE Journals & Magazine | IEEE Xplore

Long-Term Depression Mimicked in an IGZO-Based Synaptic Transistor
Long-Term Depression Mimicked in an IGZO-Based Synaptic Transistor

IEEE Electron Device Letters
IEEE Electron Device Letters

IEEE Electron Devices Society - This month, the Cover Article for the IEEE Electron Device Letters is on 3D NOR flash with single-crystal silicon channel. Click to read, https://bit.ly/3ssMecZ Please enjoy this
IEEE Electron Devices Society - This month, the Cover Article for the IEEE Electron Device Letters is on 3D NOR flash with single-crystal silicon channel. Click to read, https://bit.ly/3ssMecZ Please enjoy this

The Inverse-Narrow-Width Effect: Ieee Electron Device Letters, Vol. Edl-I, No. JULY 1986 419 | PDF | Mosfet | Field Effect Transistor
The Inverse-Narrow-Width Effect: Ieee Electron Device Letters, Vol. Edl-I, No. JULY 1986 419 | PDF | Mosfet | Field Effect Transistor

IIIB-6 "CODMOS" โ€” A depletion MOSFET using fixed oxide charge | IEEE Journals & Magazine | IEEE Xplore
IIIB-6 "CODMOS" โ€” A depletion MOSFET using fixed oxide charge | IEEE Journals & Magazine | IEEE Xplore

Kan-Hao Xue Publication
Kan-Hao Xue Publication

Journal of Microelectromechanical Systems - IEEE Electron Devices Society
Journal of Microelectromechanical Systems - IEEE Electron Devices Society

Positive Bias Temperature Instability and Hot Carrier Degradation of Back-End-of-Line, nm-Thick, In2O3 Thin-Film Transistors
Positive Bias Temperature Instability and Hot Carrier Degradation of Back-End-of-Line, nm-Thick, In2O3 Thin-Film Transistors

Issue Image no(s) - IEEE Electron Device Letters
Issue Image no(s) - IEEE Electron Device Letters

Investigation of the RTN Distribution of Nanoscale MOS Devices From Subthreshold to On-State
Investigation of the RTN Distribution of Nanoscale MOS Devices From Subthreshold to On-State